Fundamental of ElectronUTU B.Tech Previous year exam paper of Fundamental of Electronics Engineering 2012, 1st semesterics Engineering
B.tech (first year)
- Explain intrinsic and extrinsic semiconductors by stating at least two examples of each.
- Explain the basic concept of forbidden gap in semi conductors and discuss the effect of temperature on it.
- Describe the formation of a p-n junction . Explain the depletion region and potential barrier.
- Explain what do you understand by clipping circuit. Describe the working of the positive clipper.
- Show that IE =IB + αIE + ICBO . In what way ICBO depend on temperature.
- Explain the binary numbers . Taking 125.525 as an example, describe decimal to binary conversion.
- Explain with the help of suitable diagram, how free electrons and holes contribute towards the electric current in a semiconductor.
- Describe how n-type and p-type semi conductors are produced. State the main difference between them.
- What do you understand by dc and ac resistance of a crystal diode. How will you find them using V-I characteristic.
- Describe the various rating of Zener diode supplied by manufactures.
- Calculate ac drain resistance , transconductance and amplification factor of a JFET with the help of following experimentally obtained data.VGS 0V 0V -0.2V
VDS 7V 15V 15V
ID 10mA 10.25mA 9.65mA - Draw the circuit of a practical single stage transistor amplifier. Explain the function of each component.
- Describe half-wave rectifier and obtain an expression for the rectification efficiency of the half-wave rectifier is used to supply 12V dc to a resistive load RL =500Ω. If the forward resistance of diode rf is 25Ω , find the rms value of ac voltage supplied to the circuit.
- Explain the CB configuration of a transistor and draw its input and output characteristics.Describe current amplification factor α collector current IC , input resistance ri and output resistance ro.
- Draw the equivalent circuit of an ideal and actual zener diode. Explain V-I characteristics of a zener diode. Describe how it can be used as a shunt regulator.
- Describe the construction and operating principle of JFET. State the advantage of JFET. A JFET has a drain current of 5 mA . If IDSS = 10 mA and VGS(OFF) = -6V,calculate the value of VGS and pinch off voltage VP.
- Explain the need of transistor biasing circuit and state its essential requirements. Obtain the expression for the stability factor S for CE configuration.
- Draw an ac equivalent circuit of a single stage common emitter transistor amplifier and expression for the voltage gain and power gain . An amplifier has an open circuit gain of 1000, an output resistance of 15Ω and an input resistance of 7 KΩ . It is supplied from a signal source of e.m.f 10 mV and internal resistance 3 KΩ . The amplifier feeds a load of 35Ω. Calculate the output voltage and power gain.
- What do you understand by an ideal operational amplifier ? Describe its characteristics and discuss lts limitations.In an op-amplifier ,the amplifier gain is 10000. The input series resistance feedback resistance are 100 KΩ and 500 KΩ respectively. If the input voltage is 1.0V, calculate output voltage.
- Describe NAND gate and NOR gate and discuss their characteristics. Explain why these are called as universal building blocks.
- Describe the single variable theorem of Boolean algebra. With the help of truth tables, explain associative and distributive laws.
How to use this UTU paper
This UTU Fundamentals of Electronics 2012 Paper | B.Tech 1st Sem resource is useful for understanding Uttarakhand Technical University question patterns for 1st sem, 2012 exam. Review the repeated units, important numerical questions, definitions and long-answer topics before making your revision plan. Compare this paper with nearby semester papers to identify common subjects and frequently asked concepts.
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